Energy storage system cost is mainly composed of battery and energy storage inverter, which together constitute 80% of the cost of electrochemical energy storage system, among which energy storage inverter accounts for 20%. IGBT insulated gate bipolar transistor is the upstream raw material of energy storage inverter. The performance of IGBT determines the performance of energy storage inverter, accounting for 20%-30% of the value of inverter.

IGBT in the field of energy storage is the main role of variable voltage, frequency conversion, alternating conversion, energy storage applications are indispensable devices.

Application value of IGBT energy storage

1、The value of stored IGBT is higher than that of PV

Energy storage uses more IGBT and SiC, involving DCDC and DCAC two links. Two schemes, integrated optical storage and separate energy storage system. Independent energy storage system, the amount of power semiconductor devices is about 1.5 times that of photovoltaic. At present, integrated optical storage may account for more than 60-70%, with a separate energy storage system accounting for 30%.

Byd IGBT module

2、IGBT has a wide range of application layers and has more advantages than MOSFET in energy storage inverters

In practical projects, IGBT has gradually replaced MOSFET as the core device of photovoltaic inverter and wind power inverter. The rapid development of new energy power generation industry will become a new driving force for the continuous growth of IGBT industry.

What is IGBT

IGBT, insulated gate bipolar transistor, insulated gate is simply understood as a valve. Commonly understood, is a valve controlled can control the two - way (multi - direction) flow of electrons transistor.

Siemens IGBT module

It is composed of BJT bipolar triode and insulated gate type field effect tube (FET) MOS. It has the advantages of high input impedance of MOSFET gold-oxygen half-effect transistor and low on-off voltage drop of power transistor GTR.

Macro - micro IGBT module

The switching function of IGBT is to form a channel by adding the forward grid voltage, and provide the base current to the PNP transistor, so that the IGBT is switched on. Conversely, the reverse gate voltage is added to eliminate the channel, flow through the reverse base current, so that the IGBT off. The driving method of IGBT is basically the same as that of MOSFET. It only needs to control the input pole N channel MOSFET, so it has high input impedance characteristics.

IGBT is the core device of energy conversion and transmission, commonly known as the "CPU" of power electronic devices. As a national strategic emerging industry, it is widely used in new energy equipment and other fields.

advantage

IGBT has many advantages, including high input impedance, small control power, simple driving circuit, fast switching speed, large on-state current, lower on-state voltage, and small loss, so it has absolute advantages in the current market environment.

Therefore, IGBT has become the most mainstream device in the current power semiconductor market, which is widely used in many fields such as new energy power generation, electric vehicles and charging piles, electrified ships, DC transmission, energy storage, industrial electronic control and energy saving.

Infineon IGBT module

classification

According to the different structure of the product, IGBT has single tube, IGBT module and intelligent power module IPM three types.

IGBT single tube is mainly used in low-power household appliances, distributed photovoltaic inverters and low-power converters, etc.

Infineon IGBT Single tube

IGBT module is mainly used in high-power industrial frequency converter, welding machine, new energy vehicles (motor controller, vehicle air conditioning, charging pile) and other areas (the current market for the sale of such modular products);

fuji IGBT module

Intelligent power module IPM is widely used in frequency conversion air conditioning, frequency conversion washing machine and other white household appliances.

Igbts can be ultra-low voltage, low voltage, medium voltage, or high voltage according to the voltage in the application scenario.

Among them, the IGBTs used by new energy vehicles, industrial control and household appliances are mainly medium voltage, while the rail transit, new energy power generation and smart grid have higher voltage requirements and mainly use high voltage IGBTs.

Igbts are mostly in the form of modules, and IHS data shows that the ratio of modules to single tubes is 3:1. Module is composed of IGBT chip and FWD (continuous current diode chip) through the customized circuit bridge, and through the plastic frame, substrate and substrate packaging modular semiconductor products.

The basic working principle is to achieve current conversion with minimum energy loss. It is a bipolar transistor with isolated gate structure. The gate itself is a MOSFET, thus combining the advantages of a bipolar transistor with its high current-carrying capacity and high blocking voltage.

Market status

In 2022, the output of IGBT industry in China reached 41 million, and the demand was about 156 million, with a self-sufficiency rate of 26.3%.

At present, the domestic IGBT market is mainly occupied by foreign manufacturers such as Infineon, Mitsubishi Electric and Fuji Electric, among which Infineon has the highest proportion, accounting for 15.9%.

IGBT module market CR3 reached 56.91%, and the combined market share of domestic manufacturers Star and CRRC Times was 5.01%. The market share of the top three manufacturers in the global IGBT discrete device market reached 53.24%, while the domestic manufacturers only Shilanwei entered the top ten manufacturers in the global IGBT discrete device market share with 3.5% market share.

Reference materials: Mining network electronic components, LeQing think Tank, insulated gate bipolar transistor (IGBT) and its application discussion, Donghai Securities, Inverter World, Fundamental investment, Network, etc