In the modern information society, the increasing data consumption, coupled with the popularization of 5G communication, the field of high-power power supply such as communication power supply is facing stringent requirements in volume, weight, working efficiency, anti-interference performance, battery compatibility, standby energy consumption and safety.
The reduction of MOS on-resistance of high voltage superjunction effectively improves the performance of communication switching power supply. Ecko Micro independently developed high-voltage superjunction MOS with advanced multilayer epitaxial and injection technology for high-power power supply and other applications, with leading domestic Rsp and FOM (RDs(oN)xQg). The fourth and fifth generation SJ MOS introduced by Eco Micro not only optimize the cellular structure, but also especially optimize the transition zone and terminal design, so it has the characteristics of high current density, strong short-circuit ability, fast switching speed and good usability, which can meet the requirements of high efficiency and reliability of customers. In order to achieve the stringent energy efficiency target of high power supply, Ecko Micro synchronous rectifier SGT MOS can be used. Ecko Micro's SGT MOS is often used in switching power supply, motor drive, BMS and other fields. The SJ MOS of Eco Micro combined with SGT MOS can achieve high conversion efficiency, robustness and low system cost.
In addition, Ecko Micro introduced a new material SiC diode device, with low on-off loss. The switch has the characteristics of low loss, strong anti-lightning surge ability, and can meet the performance requirements of high energy efficiency standard grade of high power supply in application.